{"id":1130,"date":"2014-09-16T12:30:07","date_gmt":"2014-09-16T12:30:07","guid":{"rendered":"http:\/\/blogs.uakron.edu\/ernianpan\/?page_id=1130"},"modified":"2014-09-16T13:20:06","modified_gmt":"2014-09-16T13:20:06","slug":"pan_re_1nano","status":"publish","type":"page","link":"https:\/\/blogs.uakron.edu\/ernianpan\/pan_re_1nano\/","title":{"rendered":"Mechanics of nanostructures and semiconductor quantum heterostructures."},"content":{"rendered":"<p><strong>(1) QD induced strain field<\/strong><\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-1150\" src=\"https:\/\/blogs.uakron.edu\/ernianpan\/wp-content\/uploads\/sites\/1130\/2014\/09\/image002.gif\" alt=\"image002\" width=\"640\" height=\"422\" \/><\/p>\n<p><em>Figure 1. Contours of hydrostatic strain gkk (10-3) on the traction-free and isolating surface of a substrate due to a point QD at a depth h=10nm below the surface. Isotropic GaAs substrate in (a), substrate GaAs (001) in (b), and substrate GaAs (111) in (c) (See Pan, E. (2002): Elastic and piezoelectric fields in substrates GaAs (001) and GaAs (111) due to a buried quantum dot. Journal of Applied Physics 91: 6379-6387.)<\/em><\/p>\n<p>&nbsp;<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-1214\" src=\"https:\/\/blogs.uakron.edu\/ernianpan\/wp-content\/uploads\/sites\/1130\/2014\/09\/image0041.gif\" alt=\"image004\" width=\"724\" height=\"692\" \/><\/p>\n<p><em>Figure 2. Piezoelectric potential in the (-110) plane induced by (a) spherical, (b) cubic, and (c) pyramidal dots containing the same volume of InAs in GaAs. The potential goes from 0 (white) to \u00b1+\u00020+\u00020+\u000200.16V (positive in red and negative in blue). (Courtesy of Davies, 1998).<\/em><\/p>\n<p>&nbsp;<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-1222\" src=\"https:\/\/blogs.uakron.edu\/ernianpan\/wp-content\/uploads\/sites\/1130\/2014\/09\/image006.gif\" alt=\"image006\" width=\"718\" height=\"324\" \/><\/p>\n<p><em>Figure 3. Contouof horizontal electric field Ex (X107 V\/m) on thfree surface of substrate AlN (1000) in (a) and AlN (0001) in (b) due to a QD at a depth h=10nm. (See Pan, E. and Yang, B. (2003): Elastic and piezoelectric fields in a substrate AlN due to a buried quantum dot. Journal of Applied Physics 93: 2435-2439.)<\/em><\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p><strong>(2) Full- vs. Semi-Coupled Model<\/strong> (See Pan, E. (2002): Elastic and piezoelectric fields around a quantum dot: Fully coupled or semi-coupled model.Journal of Applied Physics 91: 3785-3796.)<\/p>\n<p>&nbsp;<\/p>\n<p><strong>I. Elastic Strain Field<\/strong><\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-1206\" src=\"https:\/\/blogs.uakron.edu\/ernianpan\/wp-content\/uploads\/sites\/1130\/2014\/09\/1.png\" alt=\"1\" width=\"735\" height=\"323\" srcset=\"https:\/\/blogs.uakron.edu\/ernianpan\/wp-content\/uploads\/sites\/1130\/2014\/09\/1.png 735w, https:\/\/blogs.uakron.edu\/ernianpan\/wp-content\/uploads\/sites\/1130\/2014\/09\/1.png?resize=300,132 300w\" sizes=\"auto, (max-width: 735px) 100vw, 735px\" \/><\/p>\n<p>&nbsp;<\/p>\n<p><strong>II. Electric Field<\/strong><\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-1198\" src=\"https:\/\/blogs.uakron.edu\/ernianpan\/wp-content\/uploads\/sites\/1130\/2014\/09\/2.png\" alt=\"2\" width=\"735\" height=\"323\" srcset=\"https:\/\/blogs.uakron.edu\/ernianpan\/wp-content\/uploads\/sites\/1130\/2014\/09\/2.png 735w, https:\/\/blogs.uakron.edu\/ernianpan\/wp-content\/uploads\/sites\/1130\/2014\/09\/2.png?resize=300,132 300w\" sizes=\"auto, (max-width: 735px) 100vw, 735px\" \/><\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p><strong>(3) Piezoelectric Potential in GaAs<\/strong> (001) and (111) (See Pan, E. (2002): Elastic and piezoelectric fields in substrates GaAs (001) andGaAs (111) due to a buried quantum dot. Journal of Applied Physics 91: 6379-6387.)<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-1226\" src=\"https:\/\/blogs.uakron.edu\/ernianpan\/wp-content\/uploads\/sites\/1130\/2014\/09\/3.png\" alt=\"3\" width=\"789\" height=\"387\" srcset=\"https:\/\/blogs.uakron.edu\/ernianpan\/wp-content\/uploads\/sites\/1130\/2014\/09\/3.png 789w, https:\/\/blogs.uakron.edu\/ernianpan\/wp-content\/uploads\/sites\/1130\/2014\/09\/3.png?resize=300,147 300w, https:\/\/blogs.uakron.edu\/ernianpan\/wp-content\/uploads\/sites\/1130\/2014\/09\/3.png?resize=768,377 768w\" sizes=\"auto, (max-width: 789px) 100vw, 789px\" \/><\/p>\n<p><em>Contours of vertical electric field on the surface of isotropic crystal 001 Contours of the electric potentialon the surface of GaAs (111) due to a point quantum dot of volume va applied at distance h=10 nm.due to a point quantum dot of volume va applied at distance h=10 nm.<\/em><\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p><strong>(4) Vertical Electric Field in GaAs<\/strong> (See Pan, E. (2002): Elastic and piezoelectric fields in substrates GaAs (001) and GaAs (111) due to a buried quantum dot. Journal of Applied Physics 91: 6379-6387.)<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-1230\" src=\"https:\/\/blogs.uakron.edu\/ernianpan\/wp-content\/uploads\/sites\/1130\/2014\/09\/4.png\" alt=\"4\" width=\"789\" height=\"387\" srcset=\"https:\/\/blogs.uakron.edu\/ernianpan\/wp-content\/uploads\/sites\/1130\/2014\/09\/4.png 789w, https:\/\/blogs.uakron.edu\/ernianpan\/wp-content\/uploads\/sites\/1130\/2014\/09\/4.png?resize=300,147 300w, https:\/\/blogs.uakron.edu\/ernianpan\/wp-content\/uploads\/sites\/1130\/2014\/09\/4.png?resize=768,377 768w\" sizes=\"auto, (max-width: 789px) 100vw, 789px\" \/><\/p>\n<p><em>Contours of vertical electric field on the surface of GaAs 001 Contours of vertical electric field Ez on the surface of GaAs 111 due to a point quantum dot of volume va applied at distance h=10 nm. due to a point quantum dot of volume va applied at distance h=10 nm.<\/em><\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p><strong>(4) Elastic and Electric fields induced by QWR<\/strong><\/p>\n","protected":false},"excerpt":{"rendered":"<p>(1) QD induced strain field Figure 1. Contours of hydrostatic strain gkk (10-3) on the traction-free and isolating surface of a substrate due to a point QD at a depth h=10nm below the surface. Isotropic GaAs substrate in (a), substrate&hellip; <\/p>\n","protected":false},"author":1994,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_monsterinsights_skip_tracking":false,"_monsterinsights_sitenote_active":false,"_monsterinsights_sitenote_note":"","_monsterinsights_sitenote_category":0,"footnotes":""},"class_list":["post-1130","page","type-page","status-publish","hentry"],"jetpack_sharing_enabled":true,"_links":{"self":[{"href":"https:\/\/blogs.uakron.edu\/ernianpan\/wp-json\/wp\/v2\/pages\/1130","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/blogs.uakron.edu\/ernianpan\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/blogs.uakron.edu\/ernianpan\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/blogs.uakron.edu\/ernianpan\/wp-json\/wp\/v2\/users\/1994"}],"replies":[{"embeddable":true,"href":"https:\/\/blogs.uakron.edu\/ernianpan\/wp-json\/wp\/v2\/comments?post=1130"}],"version-history":[{"count":16,"href":"https:\/\/blogs.uakron.edu\/ernianpan\/wp-json\/wp\/v2\/pages\/1130\/revisions"}],"predecessor-version":[{"id":1246,"href":"https:\/\/blogs.uakron.edu\/ernianpan\/wp-json\/wp\/v2\/pages\/1130\/revisions\/1246"}],"wp:attachment":[{"href":"https:\/\/blogs.uakron.edu\/ernianpan\/wp-json\/wp\/v2\/media?parent=1130"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}